Physical-Mechanical Properties of Monocrysalline Si1-XGEX(X≤0,02)Alloys
Over the last few years, the interest in the SiGe alloy bulk crystals and epitaxial structures has been sharply increased, that is
stipulated by high perspectives of creation and application of high-efficient, radiation resistant, high-speed semiconductor
devices based on them.
Present work deals with the investigations of the influence of hightemperature annealing and deformation on
themicrostructure, electrophysical properties and hysteretic and microplastic damping processes of torsional oscillations of
monocrystalline Si1-xGex(x ≤ 0.02) alloys.
The object of the research is Si1-xGex (x≤0,02) alloys grown by Czochralski method in  crystallographic direction.
Microstructure of the samples was investigated by optical microscope NMM-80RF/TRF. Electrical characteristics were
determined by Hall Effect measurements on the Ecopia HMS-3000 device. Amplitude dependence of internal friction and
shear modulus were investigated by the laboratory device at the fixed temperatures (20 and 700⁰C), in the ranges of
torsional oscillations frequency (0.5-5 Hz) and strain amplitude (10-5-5.10-3).
It is shown, that microstructure of SiGe alloys on the planes (111) is characterized by inhomogeneously distributed
dislocations, that is more clearly revealed with increasing Ge content.
Influence of anneling in vacuum at 900 and 1200⁰C temperarures was investigated. Duration of anneling is 10hrs. Tendency
to increasing values of critical strain amplitudes, at which break-away of various dislocations from the weak and strong
pinning centers takes place was revelaed. Cyclic deformation of the annealed samples decreases critical values of strain
amplitude by 10-15%, connected to the weak point pinning centers of dislocations.Peculiarities of changes of physicalmechanical
characteristics stipulated by Ge alloying, Ar-ions implantation and hightemperature annealing and deformation
have been analyzed
Keywords - SiGe alloys, Dislocation, Strain amplitude, microplastic deformation, annealing.