Paper Title
A Normally-Off Algan/Gan Hemt with Field Plate and Hybrid Drain
Abstract
Throughout, our requirements for power devices have centered on their performance, controllability, reliability,
and high-frequency capabilities. In pursuit of superior power devices, we have investigated various structures of Normallyoff
AlGaN/GaN HEMT devices. Compared to traditional Normally-off AlGaN/GaNHEMT devices, the inclusion of a Field
Plate (FP) structure helps to disperse electric field peaks, enhancing breakdown voltage. The Hybrid Drain (HD) structure
suppresses current collapse and reverse breakdown when compared to conventional structures.This paper conducts a DC
characteristics analysis on three structures: FP-only, HD-only, and FP-HD composite structure. By characterizing the results,
improved electrical performance has been achieved, expanding the device's application range. Experimental validation
confirms that each of the three structures exhibits favorable characteristics in terms of threshold Voltage (Vth), on-state
Resistance (Ron), and maximum saturation current (IDS·max).
Keywords - Field Plate, Hybrid DrainandNormally-off AlGaN/GaNHEMT